Ferromagnetic semiconductors, which combine semiconductor and magnetic properties, are key to developing spin-based devices. Previously studied materials, such as (Ga,Mn)As, have Curie temperatures below room temperature, thereby limiting their practical use. Now, researchers have overcome these limitations by utilizing the step-flow growth method, achieving a record-high Curie temperature of 530 degrees K, facilitating the development of stable, room-temperature semiconductor spintronic devices.
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